It's said that:Samsung will accelerate the production of DRAM
In recent days, Taiwan media reported that the rok government and samsung electronics will sign a memorandum with the national development and reform commission of China in the near future, which will cover relevant cooperation in the semiconductor field, including the possibility of expanding investment and technical cooperation in China. The event will likely have two effects on the future memory industry: DRAM is still tight, but future gains will be subdued.
As the price of memory continues to rise over six seasons, it has caused a number of Chinese smartphone brands to be under pressure. So at the end of last year, China's reform commission officially disapproved of samsung's semiconductor, further reducing the increase in the first quarter action memory.
Because China has been the largest outlet for memory output in recent years, whether domestic demand or export, the proportion of memory purchased through China continues to increase. Therefore, samsung must respect and respond to the protests in the Chinese market.
This event will have two implications for the future memory of the memory industry, and DRAM may still be in a tight position, but the future gains will be subdued. In terms of DRAM, the current profit of the supplier in the production of mobile memory is much lower than that of other products, which is affected by the weak demand of the smart phone in the first quarter, coupled with the action of the national development and reform commission (NDRC), which is expected to be more restrained in future price increases.
Looking ahead, suppliers are expected to continue to shift existing capacity from operational memory to higher gross margin products, resulting in further convergence of price increases for other products. In addition, suppliers are more likely to increase production capacity to avoid excessive price increases. In the NAND Flash field, the proportion of 3D NAND Flash has been continuously improved this year, so the supply tight situation has improved significantly compared with last year.
In response to the strong dissatisfaction expressed by Chinese officials on the sustained rise in memory prices of local enterprises, the possibility of new production capacity and the time range may be positive for the suppliers, considering that the price increase is restrained and the cost is reduced. By increasing the production capacity, the contribution of bit output can not only maintain the price stability, but also hope to maintain the absolute profit of the enterprise in DRAM products.
As the price of memory continues to rise over six seasons, it has caused a number of Chinese smartphone brands to be under pressure. So at the end of last year, China's reform commission officially disapproved of samsung's semiconductor, further reducing the increase in the first quarter action memory.
Because China has been the largest outlet for memory output in recent years, whether domestic demand or export, the proportion of memory purchased through China continues to increase. Therefore, samsung must respect and respond to the protests in the Chinese market.
This event will have two implications for the future memory of the memory industry, and DRAM may still be in a tight position, but the future gains will be subdued. In terms of DRAM, the current profit of the supplier in the production of mobile memory is much lower than that of other products, which is affected by the weak demand of the smart phone in the first quarter, coupled with the action of the national development and reform commission (NDRC), which is expected to be more restrained in future price increases.
Looking ahead, suppliers are expected to continue to shift existing capacity from operational memory to higher gross margin products, resulting in further convergence of price increases for other products. In addition, suppliers are more likely to increase production capacity to avoid excessive price increases. In the NAND Flash field, the proportion of 3D NAND Flash has been continuously improved this year, so the supply tight situation has improved significantly compared with last year.
To observe the DRAM supply, because there is no new production capacity contribution to the output, this year is still in short supply.
In response to the strong dissatisfaction expressed by Chinese officials on the sustained rise in memory prices of local enterprises, the possibility of new production capacity and the time range may be positive for the suppliers, considering that the price increase is restrained and the cost is reduced. By increasing the production capacity, the contribution of bit output can not only maintain the price stability, but also hope to maintain the absolute profit of the enterprise in DRAM products.